This layer is made by placing molybdenum (Mo) through DC sputtering, resulting in a highly reflective and conductive film working as the main contact for the cell. The back contact or conductive sheet is directly placed on top of the substrate, before placing the photovoltaic material. This is a p-n heterojunction manufactured by placing a p-type layer made from copper indium gallium selenide (CIGS) through co-evaporation and a p-type layer of Cadmium sulfide (CdS) deposited by CBD on top of the CIGS. The photovoltaic material is the heart of the CIGS solar cell. The TCO layer is manufactured with Intrinsic Zinc Oxide (i-ZnO) placed over the CdS buffer, and then covered with an AZO compound layer made of Aluminum doped Zinc Oxide (Al: ZnO). This layer protecting the CdS buffer from external damage is placed in the cell through sputtering or CVD. The protective layer is called Transparent Conductive Oxide (TCO) layer. The materials used in each layer of the manufacturing process for the CIGS solar cell are the following: Protective layer There are different processes used in the manufacture of CIGS solar cells, some include Direct-Current (DC) sputtering which is a variation of physical vapor deposition (PVD), Chemical Bath Depositions (CBD), Chemical Vapor Deposition (CVD), or co-evaporation processes. Layers of the CIGS thin-film solar panel - Source: Office of ENERGY EFFICIENCY & RENEWABLE ENERGYĮach layer in the CIGS thin-film solar panel either plays a vital role in the solar energy conversion process or defines the application for the module. Like many other thin-film solar panels, CIGS PV modules are manufactured using four vital layers: The materials and manufacturing process of CIGS solar cells This current can power a load, be stored in batteries, or sent to the grid and be accounted for by the Net Metering system. The CIGS solar cell created with CIGS and Cadmium sulfide (CdS) for the absorber, generates power by absorbing photons from incoming sunlight, producing electrons that travel from the n-side to the p-side of the junction in the absorber layer.Īll the aforementioned process generates an electric current harnessed by the circuitry designed around the CIGS thin-film solar panel. In 1995, researchers from the National Renewable Energy Laboratory (NREL) embedded Gallium into the CIS matrix and created the first CIGS solar cell with an efficiency of 17.1%.ĬIGS thin-film solar panels generate power like other PV modules under the photovoltaic effect. The precursor of the CIGS solar cell was the Copper Indium Selenide (CuInSe2 or CIS) cell created by The Boeing Company with a 9.4% efficiency. Karl Böer, it was not until 1981 when CIGS technology was created. While thin-film technology was first developed in 1972 by Prof. This technology is being popularized for utility-scale installations, Building-Integrated Photovoltaics (BIPV), PV rooftops, flexible thin-film solar panels, and more. The CIGS thin-film solar panel is a variety of thin-film modules using Copper Indium Gallium Selenide (CIGS) as the main semiconductor material for the absorber layer. Looking into the future of CIGS thin-film solar technologyīasics: What are CIGS thin-film solar panels?.Typical applications of CIGS thin-film solar panels.Other types of thin-film solar technologies How do CIGS thin-film panels stack up against traditional crystalline panels?.
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